Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells

High-Speed InP-Based Long-Wavelength VCSELs

The rapid growth of internet and cloud computing applications drives a huge demand for bandwidth capacity in communication networks, while power consumption, cost, and space density must scale down. This growth leads to an increase in the size of data centers (longer optical links), and of the fibers’ channel data rate, rooted in Moore’s Law. Until now, multi-mode fibers (MMF) have been largely...

Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)

Abstract: In this study, the effects of variation of thickness and the number of quantumwells as well as the contact length were investigated. In this paper, a vertical cavity surfaceemitting laser was simulated using of software based on finite element method. Thenumber of quantum wells was changed from 3 to 9 and the results which are related tooutput power, resonance ...

Novel electro-optical phase modulator based on GaInAs/InP modulation-doped quantum-well structures

Design of a new asymmetric waveguide in InP-Based multi-quantum well laser

Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...

Strong Optical Filed Intensity Improvement Introducing InGaAsP Quantum Wells in InP Nanocavity

This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.